PART |
Description |
Maker |
BCR16CM |
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
|
Renesas Electronics Corporation
|
BCR20A BCR20B BCR20C BCR20E |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE
|
Mitsubishi Electric Corporation
|
BCR8CS |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
CR03AM |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
BCR25A BCR25B |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
PS21342-N |
DIP - IPM MITSUBISHI SEMICONDUCTOR Power Module TRANSFER-MOLD TYPE INSULATED TYPE MITSUBISHI SEMICONDUCTOR TRANSFER-MOLD TYPE INSULATED TYPE Intelligent Power Module TRANSFER-MOLD TYPE INSULATED TYPE
|
Mitsubishi Electric Corporation Mitsubishi Electric Semiconductor Powerex Power Semiconductors
|
MGF0911A 0911A |
From old datasheet system MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
TMP93CS42A |
16-Bit Microcontroller TLCS-900 Family: 900/L Series
|
Toshiba
|
TMP93PW40D |
16-Bit Microcontroller TLCS-900 Family: 900/L Series
|
Toshiba
|
TMP93PW20A |
16-Bit Microcontroller TLCS-900 Family: 900/L Series
|
Toshiba
|
TMP96C141B |
16-Bit Microcontroller TLCS-900 Family: 900 Series
|
Toshiba
|
APT64GA90LD30 |
Insulated Gate Bipolar Transistor - Power MOS 8; Package: TO-264; BV(CES) (V): 900; VCE(sat) (V): 3.1; IC (A): 64; 117 A, 900 V, N-CHANNEL IGBT, TO-264AA
|
Microsemi, Corp.
|